bzx84-g-series www.vishay.com vishay semiconductors rev. 1.2, 28-feb-13 1 document number: 83458 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 small signal zener diodes features ? silicon planar zener diodes ? the zener voltages are graded according to the international e24 stan dard. standard zener voltage tolerance is 5 %, indicated by the c in the ordering code. replace c with b for 2 % tolerance. ? aec-q101 qualified ? esd capability acc. to aec-q101: human body model: > 8 kv, machine model: > 800 v ? base p/n-g3 - green, commercial grade ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 primary characteristics parameter value unit v z range nom. 2.4 to 75 v test current i zt 2; 5 ma v z specification pulse current int. construction single 20421 1 2 3 ordering information device name ordering code taped units per reel minimum order quantity bzx84-g-series bzx84c2v4-g3-08 to bzx84c75-g3-08 3000 (8 mm tape on 7" reel) 15 000 bzx84b2v4-g3-08 to bzx84b75-g3-08 bzx84c2v4-g3-18 to bzx84c75-g3-18 10 000 (8 mm tape on 13" reel) 10 000 bzx84b2v4-g3-18 to bzx84b75-g3-18 package package name weight molding compound flammability rating moisture sensitivity level soldering conditions sot-23 8.1 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals absolute maximum ratings parameter test condition symbol value unit power dissipation t amb = 25 c, device on fi berglass substrate, acc. layout on page 7 p tot 300 mw thermal resistance junction to ambient air t amb = 25 c, device on fi berglass substrate, acc. layout on page 7 r thja 420 k/w junction temperature t j 150 c storage temperature range t stg - 65 to + 150 c operating temperature range t op - 55 to + 150 c
bzx84-g-series www.vishay.com vishay semiconductors rev. 1.2, 28-feb-13 2 document number: 83458 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical characteristics (t amb = 25 c, unless otherwise specified) part number marking code zener voltage range test current reverse leakage current dynamic resistance temperature coefficient v z at i zt1 i zt1 i zt2 i r at v r z z at i zt1 z zk at i zt2 ? vz at i zt1 v ma a v ? 10 -4 /c min. nom. max. max. max. min. max. bzx84c2v4-g g50 2.2 2.4 2.6 5 1 50 1 100 275 - 9 - 4 bzx84c2v7-g g51 2.5 2.7 2.9 5 1 20 1 100 600 - 9 - 4 bzx84c3v0-g g52 2.8 3.0 3.2 5 1 10 1 95 600 - 9 - 3 bzx84c3v3-g g53 3.1 3.3 3.5 5 1 5 1 95 600 - 8 - 3 bzx84c3v6-g g54 3.4 3.6 3.8 5 1 5 1 90 600 - 8 - 3 bzx84c3v9-g g55 3.7 3.9 4.1 5 1 3 1 90 600 - 7 - 3 bzx84c4v3-g g56 4.0 4.3 4.6 5 1 3 1 90 600 - 6 - 1 bzx84c4v7-g g57 4.4 4.7 5.0 5 1 3 2 80 500 - 5 2 bzx84c5v1-g g58 4.8 5.1 5.4 5 1 2 2 60 480 - 3 4 bzx84c5v6-g g59 5.2 5.6 6.0 5 1 1 2 40 400 - 2 6 bzx84c6v2-g g60 5.8 6.2 6.6 5 1 3 4 10 150 - 1 7 bzx84c6v8-g g61 6.4 6.8 7.2 5 1 2 4 15 80 2 7 bzx84c7v5-g g62 7.0 7.5 7.9 5 1 1 5 15 80 3 7 bzx84c8v2-g g63 7.7 8.2 8.7 5 1 0.7 5 15 80 4 7 bzx84c9v1-g g64 8.5 9.1 9.6 5 1 0.5 6 15 100 5 8 bzx84c10-g g65 9.4 10 10.6 5 1 0.2 7 20 150 5 8 bzx84c11-g g66 10.4 11 11.6 5 1 0.1 8 20 150 5 9 bzx84c12-g g67 11.4 12 12.7 5 1 0.1 8 25 150 6 9 bzx84c13-g g68 12.4 13 14.1 5 1 0.1 8 30 170 7 9 bzx84c15-g g69 13.8 15 15.6 5 1 0.05 10.5 30 200 7 9 bzx84c16-g g70 15.3 16 17.1 5 1 0.05 11.2 40 200 8 9.5 bzx84c18-g g71 16.8 18 19.1 5 1 0.05 12.6 45 225 8 9.5 bzx84c20-g g72 18.8 20 21.2 5 1 0.05 14.0 55 225 8 10 bzx84c22-g g73 20.8 22 23.3 5 1 0.05 15.4 55 250 8 10 bzx84c24-g g74 22.8 24 25.6 5 1 0.05 16.8 70 250 8 10 bzx84c27-g g75 25.1 27 28.9 2 0.5 0.05 18.9 80 300 8 10 bzx84c30-g g76 28 30 32 2 0.5 0.05 21.0 80 300 8 10 bzx84c33-g g77 31 33 35 2 0.5 0.05 23.1 80 325 8 10 bzx84c36-g g78 34 36 38 2 0.5 0.05 25.2 90 350 8 10 bzx84c39-g g79 37 39 41 2 0.5 0.05 27.3 130 350 10 12 bzx84c43-g g80 40 43 46 2 0.5 0.05 30.1 150 375 10 12 bzx84c47-g g81 44 47 50 2 0.5 0.05 32.9 170 375 10 12 bzx84c51-g g82 48 51 54 2 0.5 0.05 35.7 180 400 10 12 bzx84c56-g g83 52 56 60 2 0.5 0.05 39.2 200 425 9 11 bzx84c62-g g84 58 62 66 2 0.5 0.05 43.4 215 450 9 12 bzx84c68-g g85 64 68 72 2 0.5 0.05 47.6 240 475 10 12 bzx84c75-g g86 70 75 79 2 0.5 0.05 52.5 255 500 10 12
bzx84-g-series www.vishay.com vishay semiconductors rev. 1.2, 28-feb-13 3 document number: 83458 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 bzx84b2v4-g h50 2.35 2.4 2.45 5 1 50 1 100 275 - 9 - 4 bzx84b2v7-g h51 2.65 2.7 2.75 5 1 20 1 100 600 - 9 - 4 bzx84b3v0-g h52 2.94 3.0 3.06 5 1 10 1 95 600 - 9 - 3 bzx84b3v3-g h53 3.23 3.3 3.37 5 1 5 1 95 600 - 8 - 3 bzx84b3v6-g h54 3.53 3.6 3.67 5 1 5 1 90 600 - 8 - 3 bzx84b3v9-g h55 3.82 3.9 3.98 5 1 3 1 90 600 - 7 - 3 bzx84b4v3-g h56 4.21 4.3 4.39 5 1 3 1 90 600 - 6 - 1 bzx84b4v7-g h57 4.61 4.7 4.79 5 1 3 2 80 500 - 5 2 bzx84b5v1-g h58 5.0 5.1 5.2 5 1 2 2 60 480 - 3 4 bzx84b5v6-g h59 5.49 5.6 5.71 5 1 1 2 40 400 - 2 6 bzx84b6v2-g h60 6.08 6.2 6.32 5 1 3 4 10 150 - 1 7 bzx84b6v8-g h61 6.66 6.8 6.94 5 1 2 4 15 80 2 7 bzx84b7v5-g h62 7.35 7.5 7.65 5 1 1 5 15 80 3 7 bzx84b8v2-g h63 8.04 8.2 8.36 5 1 0.7 5 15 80 4 7 bzx84b9v1-g h64 8.92 9.1 9.28 5 1 0.5 6 15 100 5 8 BZX84B10-G h65 9.8 10 10.2 5 1 0.2 7 20 150 5 8 bzx84b11-g h66 10.8 11 11.2 5 1 0.1 8 20 150 5 9 bzx84b12-g h67 11.8 12 12.2 5 1 0.1 8 25 150 6 9 bzx84b13-g h68 12.7 13 13.3 5 1 0.1 8 30 170 7 9 bzx84b15-g h69 14.7 15 15.3 5 1 0.05 10.5 30 200 7 9 bzx84b16-g h70 15.7 16 16.3 5 1 0.05 11.2 40 200 8 9.5 bzx84b18-g h71 17.6 18 18.4 5 1 0.05 12.6 45 225 8 9.5 bzx84b20-g h72 19.6 20 20.4 5 1 0.05 14 55 225 8 10 bzx84b22-g h73 21.6 22 22.4 5 1 0.05 15.4 55 250 8 10 bzx84b24-g h74 23.5 24 24.5 5 1 0.05 16.8 70 250 8 10 bzx84b27-g h75 26.5 27 27.5 2 0.5 0.05 18.9 80 300 8 10 bzx84b30-g h76 29.4 30 30.6 2 0.5 0.05 21 80 300 8 10 bzx84b33-g h77 32.3 33 33.7 2 0.5 0.05 23.1 80 325 8 10 bzx84b36-g h78 35.3 36 36.7 2 0.5 0.05 25.2 90 350 8 10 bzx84b39-g h79 38.2 39 39.8 2 0.5 0.05 27.3 130 350 10 12 bzx84b43-g h80 42.1 43 43.9 2 0.5 0.05 30.1 150 375 10 12 bzx84b47-g h81 46.1 47 47.9 2 0.5 0.05 32.9 170 375 10 12 bzx84b51-g h82 50 51 52 2 0.5 0.05 35.7 180 400 10 12 bzx84b56-g h83 54.9 56 57.1 2 0.5 0.05 39.2 200 425 9 11 bzx84b62-g h84 60.8 62 63.2 2 0.5 0.05 43.4 215 450 9 12 bzx84b68-g h85 66.6 68 69.4 2 0.5 0.05 47.6 240 475 10 12 bzx84b75-g h86 73.5 75 76.5 2 0.5 0.05 52.5 255 500 10 12 electrical characteristics (t amb = 25 c, unless otherwise specified) part number marking code zener voltage range test current reverse leakage current dynamic resistance temperature coefficient v z at i zt1 i zt1 i zt2 i r at v r z z at i zt1 z zk at i zt2 ? vz at i zt1 v ma a v ? 10 -4 /c min. nom. max. max. max. min. max.
bzx84-g-series www.vishay.com vishay semiconductors rev. 1.2, 28-feb-13 4 document number: 83458 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - forward characteristics fig. 2 - admissible power dissipation vs. ambient temperature fig. 3 - dynamic resistance vs. zener current fig. 4 - dynamic resistance vs. zener current fig. 5 - dynamic resistance vs. zener current fig. 6 - thermal differential resistance vs. zener voltage 18114 ma 10 3 10 2 10 -1 10 -2 10 -3 10 -4 10 -5 10 1 i f v f 0 0.2 0.4 0.6 0.8 1v t j = 100 c t j = 25 c 18115 mw 400 100 0 300 200 p tot t amb 0 100 200 c 500 18117 1000 5 4 3 2 5 4 3 2 100 1 r zj 0.1 25 25 110 i z t j = 25 c 2.7 5 4 3 2 10 25 100 ma 3.6 4.7 5.1 5.6 t j = 25 c 33 27 22 18 15 12 10 6.8/8.2 6.2 18120 10 3 7 5 4 3 2 7 5 4 3 2 10 0.1 2345 2345 110 ma r zj i z t j = 25 c 47 + 51 43 39 36 10 2 18121 10 3 5 4 3 2 5 4 3 2 10 2 1 r zth 5 4 3 2 10 1 2345 2345 10 100 v v z at i z = 5 ma negative positive v z t j r zth = r tha x v z x
bzx84-g-series www.vishay.com vishay semiconductors rev. 1.2, 28-feb-13 5 document number: 83458 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - dynamic resist ance vs. zener voltage fig. 8 - temperature dependence of zener voltage vs. zener voltage fig. 9 - change of zener vo ltage vs. junction temperature fig. 10 - temperature dependence of zener voltage vs. zener voltage fig. 11 - change of zener vo ltage vs. junction temperature fig. 12 - change of zener voltage from turn-on up to the point of thermal equilibrium vs. zener voltage 18122 100 7 5 4 3 2 7 5 4 3 2 1 r zj 10 t j = 25 c i z = 5 ma 1 2345 2345 10 100 v v z 18123 25 20 15 10 5 0 - 5 mv/c v z t j 1 2345 2345 10 100 v v z 5 ma 1 ma 20 ma i z = 18124 v z at i z = 5 ma 25 15 10 8 7 6.2 5.9 5.6 5.1 4.7 3.6 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 - 1 - 0.2 v z v t j 020406080 100 120 140 c 18125 100 80 60 40 20 0 mv/c v z t j 0 20 40 80 60 100 v v z i z = 5 ma 18126 9 7 5 3 1 - 1 v v z 8 6 4 2 0 0 100 60 t j 20 40 120 80 140 c i z = 2 ma 51 43 36 18127 1.6 1.2 0.8 0.4 0 - 0.4 v v z 1.4 1 0.6 0.2 - 0.2 1 2345 2345 10 100 v v z at i z = 5 ma v z = r zth x i z
bzx84-g-series www.vishay.com vishay semiconductors rev. 1.2, 28-feb-13 6 document number: 83458 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 13 - change of zener voltage from turn-on up to the point of thermal equilibrium vs. zener voltage fig. 14 - breakdown characteristics fig. 15 - breakdown characteristics fig. 16 - breakdown characteristics 18128 5 4 3 2 1 0 v v z 0 20 40 60 80 100 v v z i z = 5 ma i z = 2 ma v z = r zth x i z 18111 test current i z 5 ma 1 23456789 0 10 v v z 3.3 3.9 5.6 2.7 ma 50 40 30 20 10 0 l z t j = 25 c 8.2 6.8 4.7 18112 10 20 30 0 40 v v z ma 30 20 10 0 l z 33 test current i z 5 ma t j = 25 c 10 12 15 18 22 27 36 18113 ma 10 8 6 4 2 0 l z 10 20 30 40 50 60 70 80 90 0 100 v v z 43 39 test current i z 5 ma t j = 25 c 47 51
bzx84-g-series www.vishay.com vishay semiconductors rev. 1.2, 28-feb-13 7 document number: 83458 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 layout for r thja test thickness: fiberglass 0.059" (1.5 mm) copper leads 0.012" (0.3 mm) package dimensions in millimeters (inches): sot-23 17451 15 (0.59) 12 (0.47) 0.8 (0.03) 5 (0.2) 7.5 (0.3) 3 (0.12) 1 (0.4) 1 (0.4) 2 (0.8) 2 (0.8) 1.5 (0.06) 5.1 (0.2) foot print recommendation: rev. 8 - date: 23. s ept.2009 17418 document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.95 (0.037) 0.95 (0.037) 2 (0.079) 0.7 (0.028) 0.9 (0.035) 0 to 8 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.)
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